| PART |
Description |
Maker |
| IPS042G IPS0151S IPS042GTR |
FULLY PROTECTED HIGH SIDE POWER MOSFET SWITCH
DUAL FULLY PROTECTED POWER MOSFET SWITCH
Intelligent Power Switch 2 Channel Low Side Driver in a SO-8 Package
|
International Rectifier
|
| STP70NS04ZC |
N-channel clamped 8mΩ - 80A TO-220 Fully protected SAFeFET Power MOSFET
N-channel clamped 8mヘ - 80A TO-220 Fully protected SAFeFET⑩ Power MOSFET
|
STMicroelectronics
|
| IPS021STRR |
FULLY PROTECTED POWER MOSFET SWITCH
|
International Rectifier
|
| IRSF3011LTR |
FULLY PROTECTED POWER MOSFET SWITCH
|
International Rectifier
|
| IPS5751S IPS5751 |
FULLY PROTECTED HIGH SIDE POWER MOSFET SWITCH
|
IRF[International Rectifier]
|
| IPS521PBF |
FULLY PROTECTED HIGH SIDE POWER MOSFET SWITCH
|
International Rectifier
|
| STP60NS04ZB06 STP60NS04ZB P60NS04ZB |
N-channel clamped - 10mohm - 60A - TO-220 Fully protected Mesh Overlay Power MOSFET
|
STMICROELECTRONICS[STMicroelectronics]
|
| IPS511E |
PERIPHERAL DRIVER|1 DRIVER|MOS|LLCC|18PIN|CERAMIC 外围设备驱动程序| 1驱动器|马鞍山| LLCC | 18PIN |陶瓷
FULLY PROTECTED HIGH SIDE POWER MOSFET SWITCH
|
International Rectifier, Corp.
|
| BLV909 |
Protected; Fully Encapsulated; Efficiency to 80%; Custom versions available
UHF power transistor
|
Philips Semiconductors
NXP Semiconductors
|
| VNB35N07 VNP35N07FI VNV35N07 1612 VNB35N0713TR VNV |
OMNIFET FULLY AUTOPROTECTED POWER MOSFET
"OMNIFET" FULLY AUTOPROTECTED POWER MOSFET
”OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET
From old datasheet system
OMNIFET: FULLY AUTOPROTECTED POWER MOSFET
”OMNIFET? FULLY AUTOPROTECTED POWER MOSFET
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
|
| STP1N120 |
channel 1200V - 30- 500mA - TO-220 Zener - protected SuperMESHPower MOSFET 通道1200 30 500mA20齐纳-保护SuperMESH⑩功率MOSFET
channel 1200V - 30ヘ - 500mA - TO-220 Zener - protected SuperMESH⑩ Power MOSFET
channel 1200V - 30Ω - 500mA - TO-220 Zener - protected SuperMESH Power MOSFET
|
STMicroelectronics N.V.
|
